Our Technology – We Focus in InGaAs 

We have wafer processing and device packaging technology in the state of the art for InGaAs photodetector developments. Based on our high quality, high yield, and high-reliability fabrication ability, we have well-developed products in 1mm~3mm large area photodiode for optical power measurement and two-dimensional focal plane array for SWIR imaging applications.

Our complete solutions for all of your InGaAs photodetector requirements can provide you with the leading fabrication, packaging, electronics, and custom design products. It is our policy to render the best quality, reasonable price, high efficiency, much creative, and best service to our customers in InGaAs photodetector products.

 

 Indium gallium arsenide (InGaAs). 

Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs.

l   Applications of electronic and optoelectronic devices.

l   High sensitivity photodetector in 900-1700nm

l   Room-temperature semiconductor 

 

 SWIR Sensor Materials Comparison 

 

Absorber Materials

Spectral Range

Operating Temperature

QE in SWIR

InGaAs
(Indium Gallium Arsenide)

0.9-1.7um

 

CLPT also do

0.6-1.7um

1.1-1.9um

1.2-2.2um

0.9-2.6um for PD

+20 °C

High ★

T2SL InGaAs/GaAsSb

(Type2 superlattice of Indium Gallium Arsenide)

0.4-2.05um

-30°C

Moderate

SiGe
(Silicon-Germanium)

0.4-1.5um

+20 °C

Low

PbSe CQD
(Quantum Dot layers)

0.4-2.1um

+20 °C

Low

MCT
(HgCdTe)

1-5um

-200 °C

Low

TOP